Service
(1) Mainly produce two specifications of polycrystalline silicon chips used in solar energy cells:125X125mm, 156X156mm.
(2) Processing of monocrystalline and multicrystalline ingots to wafer as well as growing of multicrystalline ingots(240-271Kg)is also possible depending on free capacities.
(3) The products were manufactured by the solar energy level silicon raw materials, the advanced vertical gradient coagulation technology and wire slicing technology, thus guaranteed the crystal orientation and the crystallization velocity effectively which can eventually insure the stability and high conversion rate of solar energy polycrystalline silicon chips.
(4) We possesses independent innovation crafts in aspects of crystal growth control and annealing.
Crystallization
Wafer production
Testing
The company is testing its products during the whole production process.
products
¡¡
(1) Mainly produce two specifications of polycrystalline silicon chips used in solar energy cells:125X125mm, 156X156mm.
(2) Processing of monocrystalline and multicrystalline ingots to wafer as well as growing of multicrystalline ingots(240-271Kg)is also possible depending on free capacities.
(3) The products were manufactured by the solar energy level silicon raw materials, the advanced vertical gradient coagulation technology and wire slicing technology, thus guaranteed the crystal orientation and the crystallization velocity effectively which can eventually insure the stability and high conversion rate of solar energy polycrystalline silicon chips.
(4) We possesses independent innovation crafts in aspects of crystal growth control and annealing.
Crystallization
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Crystal Growing¡¤Equipment£ºFeedstock Etching Line ¡¤Silicon material which is not pre-washed can be cleaned and prepared for further processing. The following materials With(99.9999 % purity) can be used to grow multi-crystalline ingots for Solar applications: ¡¤Poly-silicon Chunks or Granular ¡¤Carbon Ends from Poly-silicon production process ¡¤Tops & tails from CZ production of semiconductor wafer producers ¡¤Pot Scrap from CZ production of semiconductor wafer producers ¡¤Broken Wafers from the production of semiconductor wafers |
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Crystallization¡¤equipment£ºDSS furnace provided by GT-Solar, USA ¡¡¡¡The company installed in the first phase 4 DSS Furnaces delivered by GT-Solar, USA. The DSS Furnace can grow -ingots with a typical weight of 240-270 kg. The size of the ingot is 690 x 690 x 220 mm and the cycle time is about 46 hrs. By the year 2007 16 more Furnaces will be added to enable the company to produce 50 MW of Wafers for the Solar Industry. |
Wafer production
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Band sawing¡¤Equipment: Merer Brger BS 801 band saw, Switzerland ¡¡¡¡The company installed a Meyer+Burger BS 801 Band Saw for cutting the 240 kg ingots into blocks. With one BS 801 it is possible to cut one ingot into blocks in about 6-7 hrs. Thus it is possible to serve 3-4 Wire Saws with only one Band Saw. |
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Infrared testing for Inclusions and micro crystals before wire sawing¡¤equipment£ºInfrared testing facility ¡¡rigid testing to ensure excellent quality. |
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Wire sawing¡¤Equipment£ºMerer Brger DS 262/C band saw, Switzerland ¡¡¡¡The multi-crystalline blocks will be glued to a workpiece holder and then processed through the DS 262/C Wire Saw. |
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Wafer cleaning¡¤Equipment: GTS Wafer cleaning line ¡¡¡¡The Wafer Cleaning Line can handle all kinds of wafers from 103x103 to 156x156 mm. The semiautomatic cleaning line has a capacity of about 1,200 wafers per hour and can be also adapted to different types of wire saw cutting slurries. |
TestingThe company is testing its products during the whole production process.
| Testing items | Testing standard | Testing content |
| Conductivity | P-Type, N-Type | Feedstock |
| P-Type | Ingots, Blocks, Wafers | |
| Resistivity | 0.8 - 3¦¸cm | Ingots, Blocks, Wafers |
| Minority carrier lifetime | > 2¦Ìs | Ingots, Blocks, Wafers |
| Dimensions | Thickness, TTV | Blocks, Wafers |
| Infrared Testing | for Inclusions | Mimicrystals in the block before wire sawing |
products | Wafer Specification | |
| Parameter | Wafers |
| General | |
| Crystal type | Multicrystalline |
| Dopant | Boron |
| Electrical characteristics | |
| Resistivity | 0.8~ 3.0¦¸cm (average 1.5¦¸cm) |
| Minority carrier lifetime | > 2¦Ìs |
| Conductivity | P-Type |
| Chemical characteristics | |
| Carbon content | < 2 x1018cm-3 |
| Oxygen content | < 4 x 1017cm-3 |
| Dimensions | |
| Wafer square side | 156 x 156¡À0.5 mm |
| 125 x 125¡À0.5 mm | |
| Wafer thickness | 240¦Ìm¡À30¦Ìm |
| TTV: | ¡Ü50¦Ìm |
| Bow: | ¡Ü60¦Ìm |
| Saw marks: | ¡Ü20¦Ìm |
| Edge defect | none |
| Wafer surface | as cut and cleaned |
| Contamination | no dirt / oil stains, remains of soap / glue No fingerprints etc. |
© JINGGONG P-D SOLAR ENERGY TECHNOLOGY 2006 ALL RIGHTS SEVERSE
Production process

Crystal Growing


Infrared testing for Inclusions and micro crystals before wire sawing
